MoSys IP Revenue Fastest-Growing Worldwide

Company Also First in Royalty Growth

SUNNYVALE, Calif.--(BUSINESS WIRE)--May 16, 2002--MoSys, Inc. (Nasdaq:MOSY - News) reported the fastest-growing IP revenues for FY2001 worldwide, among the top 20 semiconductor intellectual property (SIP) companies, according to research conducted by Jim Tully, a chief analyst at Gartner Dataquest. MoSys' revenues from semiconductor intellectual property leapt from $1.4 million in 2000 to $9.5 million in 2001.

MoSys also ranked first in growth of royalties derived from semiconductor IP, from zero in 2000 to $3.4 million in 2001. These royalties represented 36 percent of MoSys' revenues from IP, higher than the industry average of 22 percent.

In the opening statement of a recent Dataquest brief, "Semiconductor Intellectual Property Market Rises 25 Percent," Jim Tully asserted, "Royalties remain the major way forward for the industry. Vendors must develop business models that will build royalty revenue."

"We're very satisfied with our worldwide number one ranking in IP revenue growth," said Mark-Eric Jones, vice president and general manager of intellectual property for MoSys, "and we're particularly pleased with the percentage of revenues that are royalties. This shows the increasing adoption of our technology for volume production by our customers, and the continuing value they receive. It's good to see that Dataquest concurs on the importance of royalties in the SIP business model."

This trend toward increasing royalties continued at MoSys during the first quarter of 2002. For Q1-2002, MoSys reported royalties higher than the entire previous year: $3.6 million. This represented 66 percent of the company's IP revenues of $5.5 million.

About MoSys

Founded in 1991, MoSys (Nasdaq:MOSY - News), develops, licenses and markets innovative memory technology for semiconductors. MoSys' patented 1T-SRAM technology offers a combination of high density, low power consumption, high speed and low cost unmatched by other available memory technologies. The single transistor bit cell used in 1T-SRAM technology results in the technology achieving much higher density than traditional four or six transistor SRAMs while using the same standard logic manufacturing processes. 1T-SRAM technology also offers the familiar, refresh-free interface and high performance for random address access cycles associated with traditional SRAMs. In addition, this technology can reduce operating power consumption by a factor of four compared with traditional SRAM technology, contributing to making it an ideal technology for embedding large memories in System on Chip (SoC) designs. 1T-SRAM technology is in volume production both in SoC products at MoSys' licensees as well as in MoSys' standalone memories. MoSys is headquartered at 1020 Stewart Drive, Sunnyvale, Calif. 94085. More information is available on MoSys' Web site at www.mosys.com.

Note to Editors: Gartner Dataquest is a division of Gartner, Inc. (NYSE: IT - News and ITB - News). 1T-SRAM® is a MoSys trademark registered in the U.S. Patent and Trademark Office. All other trade, product, or service names referenced in this release may be trademarks or registered trademarks of their respective holders.

     MoSys, Inc., Sunnyvale
     K.T. Boyle, 408/731-1830
     kboyle@mosys.com
              or
     Lee Public Relations
     Barabara Marker, 503/209-2323
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